MO5356

Features

  • Any frequency between 1MHz and 60MHz in 1Hz steps
  • ±100 x 10-9 over-temperature stability
  • ±1.0x10-9/℃ frequency slope (ΔF/ΔT)
  • Up to ±3200 x 10-6 pull range (VCTCMO or DCTCMO)
  • LVCMOS or Clipped Sinewave output

Applications

  • 4G/5G radio, Small cell
  • IEEE1588 boundary and grandmaster clocks
  • Carrier-grade routers and switches
  • Synchronous Ethernet
  • Optical transport-SONET/SDH, OTN, Stratum3
  • DOCSIS 3.x remote PHY
  • GPS disciplined oscillators, Precision GNSS systems

Standard Specification

Item Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 1 - 60 MHz  
Supply Voltage Vdd +2.97 +3.3 +3.63 V Contact KDS for +2.25V to +3.63V continuous supply voltage support
+2.7 +3.0 +3.3
+2.52 +2.8 +3.08
+2.25 +2.5 +2.75
Operating Temperature Range T_use -20 - +70 Extended Commercial, ambient temperature
-40 - +85 Industrial, ambient temperature
-40 - +105 Extended Industrial, ambient temperature
Initial Tolerance F_int -0.5 - +0.5 ×10-6 Initial frequency at +25℃ inclusive of solder-down shift at 48 hours after 2 reflows
-1.0 - +1.0
Frequency Stability over temperature F_stab -0.1 - +0.1 ×10-6 Referenced to (fmax + fmin)/2 over the specified temperature range
-0.2 - +0.2
-0.25 - +0.25
Frist Year Aging F_aging1 - ±0.3 - ×10-6 TA = +25℃, F_stab = ±0.1 x 10-6
- ±1.0 - TA = +25℃, F_stab = ±0.2 or ±0.25 x 10-6
Pull range PR ±6.25 ×10-6 VC TC-MO mode. Contact KDS for ±12.5, ±25 x 10-6
±6.25, ±10, ±12.5,±25, ±50, ±80, ±100, ±125, ±150, ±200, ±400, ±600, ±800, ±1200, ±1600, ±3200 DCTC-MO mode.
Lower control voltage VC_L - - Vdd x 0.1 V  
Upper control voltage VC_U Vdd x 0.9 - - V  
Control voltage input impedance VC_z 8 - -  
Control voltage input bandwidth VC_c - 10 - kHz  
Frequency Change Polarity - Positive Slope -  
Current Consumption Idd - +44 +53 mA F = 19.2MHz, No Load, TC-MO and DC TC-MO mode.
- +48 +57 F = 19.2MHz, No Load, VC TC-MO mode.
OE Disable Current I_od - +43 +51 mA OE = GND, output is weakly pull down,TC-MO and DC TC-MO mode.
- +47 +55 OE = GND, output is weakly pull down, VC TC-MO mode.
Input Low voltage VIL - - Vdd x 0.3 V  
Input High voltage VIH Vdd x 0.7 - - V  
Start-up Time T_start - 2.5 3.5 ms Time to first pulse,
measured from the time Vdd reaches 90% of its final value
RMS Period Jitter T_jitt - 0.8 1.1 ps f = 10MHz per JESD65 standard
LVCMOS Output
Duty Cycle DC 45 - 55 %  
Output Low Voltage VOL - - Vdd x 0.1 V IOL = -3mA
Output High Voltage VOH Vdd x 0.9 - - V IOH = +3mA
Rise and Fall Time Tr,Tf 0.8 1.2 1.9 ps 10% to 90% Vdd
RMS Phase Jitter (Random) T_phj - 0.31 0.48 ps f = 10MHz, Integration bandwidth = 12kHz to 5MHz, -40 to +85℃
Clipped Sinewave Output
Output Voltage Level Vout +0.8 - +1.2 V 10kΩ || 10pF ± 10%
Rise and Fall Time Tr,Tf - 3.5 4.6 ns 20% to 80% Vdd, 19.2MHz
RMS Phase Jitter(Random) T_phj - 0.31 0.45 ps f = 19.2MHz, Integration bandwidth = 12kHz to 5MHz, -40 to +85℃
Packing Unit 1000pcs./reel (φ180)

Consult our sales representative for other specifications.

Dimentions, etc. (Click for full size)

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FAX:+81-79-425-1134